Model Number |
IPI032N06N3 G |
IRF6662TRPBF |
Model Name |
Infineon Technologies IPI032N06N3 G |
Infineon Technologies IRF6662TRPBF |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
TO-262-3 MOSFETs ROHS |
100V 22mΩ@8.2A,10V 4.9V@100uA 1PCSNChannel MG-WDSON-5 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.500 grams / 0.017637 oz |
Package / Case |
TO-262-3 |
MG-WDSON-5 |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
- |
EAR99 |
Drain Source Voltage (Vdss) |
- |
100V |
Continuous Drain Current (Id) |
- |
8.3A;47A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
- |
22mΩ@8.2A,10V |
Power Dissipation (Pd) |
- |
2.8W;89W |
Gate Threshold Voltage (Vgs(th)@Id) |
- |
4.9V@100uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
- |
Type |
- |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
- |
1.36nF@25V |
Total Gate Charge (Qg@Vgs) |
- |
31nC@10V |