| Model Number |
| IPN80R2K4P7 |
BSZ100N06LS3G |
| Model Name |
| Infineon Technologies IPN80R2K4P7 |
Infineon Technologies BSZ100N06LS3G |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| SOT-223-3 MOSFETs ROHS |
60V 11A 2.1W 10mΩ@10V,20A 2.2V@23uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.100 grams / 0.003527 oz |
| Package / Case |
| SOT-223-3 |
TSDSON-8(3.3x3.3) |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
60V |
| Continuous Drain Current (Id) |
| - |
11A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
10mΩ@10V,20A |
| Power Dissipation (Pd) |
| - |
2.1W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
2.2V@23uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
N/A |
| Total Gate Charge (Qg@Vgs) |
| - |
N/A |
