Model Number |
IPN80R2K4P7 |
IPT019N08N5ATMA1 |
Model Name |
Infineon Technologies IPN80R2K4P7 |
Infineon Technologies IPT019N08N5ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
SOT-223-3 MOSFETs ROHS |
80V 231W 1.9mΩ@150A,10V 3.8V@159uA 1PCSNChannel HSOF-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.870 grams / 0.030688 oz |
Package / Case |
SOT-223-3 |
HSOF-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
- |
EAR99 |
Drain Source Voltage (Vdss) |
- |
80V |
Continuous Drain Current (Id) |
- |
32A;247A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
- |
1.9mΩ@150A,10V |
Power Dissipation (Pd) |
- |
231W |
Gate Threshold Voltage (Vgs(th)@Id) |
- |
3.8V@159uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
- |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
- |
9.2nF@40V |
Total Gate Charge (Qg@Vgs) |
- |
127nC@10V |