Model Number |
IPP120N10S403AKSA1 |
IPD80R1K2P7 |
Model Name |
Infineon Technologies IPP120N10S403AKSA1 |
Infineon Technologies IPD80R1K2P7 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 120A 250W 3.9mΩ@100A,10V 3.5V@180uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
800V 4.5A 1Ω@10V,1.7A 37W 3V@800uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.483 grams / 0.017037 oz |
Package / Case |
TO-220-3 |
TO-252-2 |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
800V |
Continuous Drain Current (Id) |
120A |
4.5A |
Power Dissipation (Pd) |
250W |
37W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
3.9mΩ@100A,10V |
1Ω@10V,1.7A |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@180uA |
3V@800uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
10.12nF@25V |
300pF@500V |
Total Gate Charge (Qg@Vgs) |
140nC@10V |
11nC@0~10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |