Compare Infineon Technologies – IPP120N10S403AKSA1 vs Infineon Technologies – IPD80R1K2P7 Specifications

IPP120N10S403AKSA1 IPD80R1K2P7
Model Number
IPP120N10S403AKSA1 IPD80R1K2P7
Model Name
Infineon Technologies IPP120N10S403AKSA1 Infineon Technologies IPD80R1K2P7
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
100V 120A 250W 3.9mΩ@100A,10V 3.5V@180uA 1PCSNChannel TO-220-3 MOSFETs ROHS 800V 4.5A 1Ω@10V,1.7A 37W 3V@800uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.483 grams / 0.017037 oz
Package / Case
TO-220-3 TO-252-2
Package / Arrange
Tube-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
100V 800V
Continuous Drain Current (Id)
120A 4.5A
Power Dissipation (Pd)
250W 37W
Drain Source On Resistance (RDS(on)@Vgs,Id)
3.9mΩ@100A,10V 1Ω@10V,1.7A
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@180uA 3V@800uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
10.12nF@25V 300pF@500V
Total Gate Charge (Qg@Vgs)
140nC@10V 11nC@0~10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

Compare Infineon Technologies - IPP120N10S403AKSA1 With Other 200 Models

Scroll to Top