| Model Number |
| IPP16CN10NGHKSA1 |
IPB80N04S4-04 |
| Model Name |
| Infineon Technologies IPP16CN10NGHKSA1 |
Infineon Technologies IPB80N04S4-04 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 100V 53A 100W 16.5mΩ@53A,10V 4V@61uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
40V 80A 4.2mΩ@10V,80A 71W 4V@35uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-220-3 |
TO-263-3 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Drain Source Voltage (Vdss) |
| 100V |
40V |
| Continuous Drain Current (Id) |
| 53A |
80A |
| Power Dissipation (Pd) |
| 100W |
71W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 16.5mΩ@53A,10V |
4.2mΩ@10V,80A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@61uA |
4V@35uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 3.22nF@50V |
N/A |
| Total Gate Charge (Qg@Vgs) |
| 48nC@10V |
N/A |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
N/A |
