Model Number |
IPP60R299CP |
BSZ086P03NS3E G |
Model Name |
Infineon Technologies IPP60R299CP |
Infineon Technologies BSZ086P03NS3E G |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
TO-220-3 MOSFETs ROHS |
30V 40A 6.5mΩ@10V,20A 69W 2.5V@105uA P Channel DFN-8(3.3x3.3) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-220-3 |
DFN-8(3.3x3.3) |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
- |
- |
Drain Source Voltage (Vdss) |
- |
30V |
Continuous Drain Current (Id) |
- |
40A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
- |
6.5mΩ@10V,20A |
Power Dissipation (Pd) |
- |
69W |
Gate Threshold Voltage (Vgs(th)@Id) |
- |
2.5V@105uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
110pF@15V |
Type |
- |
P Channel |
Input Capacitance (Ciss@Vds) |
- |
3.19nF@15V |
Total Gate Charge (Qg@Vgs) |
- |
43.2nC@0~10V |