| Model Number |
| IPP80N08S406AKSA1 |
BUZ111S |
| Model Name |
| Infineon Technologies IPP80N08S406AKSA1 |
Infineon Technologies BUZ111S |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 80V 80A 150W 5.8mΩ@80A,10V 4V@90uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
55V 80A 8mΩ@80A,10V 300W 4V@240uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-220-3 |
TO-220-3 |
| Package / Arrange |
| Tube-packed |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 80V |
55V |
| Continuous Drain Current (Id) |
| 80A |
80A |
| Power Dissipation (Pd) |
| 150W |
300W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 5.8mΩ@80A,10V |
8mΩ@80A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@90uA |
4V@240uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 4.8nF@25V |
4.5nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 70nC@10V |
185nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |
