Compare Infineon Technologies – IPP80N08S406AKSA1 vs Infineon Technologies – IPB030N08N3 G Specifications

IPP80N08S406AKSA1 IPB030N08N3 G
Model Number
IPP80N08S406AKSA1 IPB030N08N3 G
Model Name
Infineon Technologies IPP80N08S406AKSA1 Infineon Technologies IPB030N08N3 G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
80V 80A 150W 5.8mΩ@80A,10V 4V@90uA 1PCSNChannel TO-220-3 MOSFETs ROHS 80V 160A 2.5mΩ@10V,100mA 214W 2.8V@155uA 1PCSNChannel TO-263-7 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-220-3 TO-263-7
Package / Arrange
Tube-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
80V 80V
Continuous Drain Current (Id)
80A 160A
Power Dissipation (Pd)
150W 214W
Drain Source On Resistance (RDS(on)@Vgs,Id)
5.8mΩ@80A,10V 2.5mΩ@10V,100mA
Gate Threshold Voltage (Vgs(th)@Id)
4V@90uA 2.8V@155uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
4.8nF@25V 6.1nF@40V
Total Gate Charge (Qg@Vgs)
70nC@10V 88nC@0~10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

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