Model Number |
IPP80N08S406AKSA1 |
IPB60R055CFD7 |
Model Name |
Infineon Technologies IPP80N08S406AKSA1 |
Infineon Technologies IPB60R055CFD7 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
80V 80A 150W 5.8mΩ@80A,10V 4V@90uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
600V 38A 46mΩ@10V,18A 178W 4V@900uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-220-3 |
TO-263-3 |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
80V |
600V |
Continuous Drain Current (Id) |
80A |
38A |
Power Dissipation (Pd) |
150W |
178W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
5.8mΩ@80A,10V |
46mΩ@10V,18A |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@90uA |
4V@900uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
4.8nF@25V |
3.194nF@400V |
Total Gate Charge (Qg@Vgs) |
70nC@10V |
79nC@0~10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |