Compare Infineon Technologies – IPP80N08S406AKSA1 vs Infineon Technologies – IPL65R099C7 Specifications

IPP80N08S406AKSA1 IPL65R099C7
Model Number
IPP80N08S406AKSA1 IPL65R099C7
Model Name
Infineon Technologies IPP80N08S406AKSA1 Infineon Technologies IPL65R099C7
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
80V 80A 150W 5.8mΩ@80A,10V 4V@90uA 1PCSNChannel TO-220-3 MOSFETs ROHS 650V 21A 128W 99mΩ@10V,5.9A 4V@590uA 1PCSNChannel VSON-4-EP(8.1x8.1) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TO-220-3 VSON-4-EP(8.1x8.1)
Package / Arrange
Tube-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Drain Source Voltage (Vdss)
80V 650V
Continuous Drain Current (Id)
80A 21A
Power Dissipation (Pd)
150W 128W
Drain Source On Resistance (RDS(on)@Vgs,Id)
5.8mΩ@80A,10V 99mΩ@10V,5.9A
Gate Threshold Voltage (Vgs(th)@Id)
4V@90uA 4V@590uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
4.8nF@25V N/A
Total Gate Charge (Qg@Vgs)
70nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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