Model Number |
IPT60R145CFD7XTMA1 |
IPG20N06S2L65AATMA1 |
Model Name |
Infineon Technologies IPT60R145CFD7XTMA1 |
Infineon Technologies IPG20N06S2L65AATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
600V 19A 116W 145mΩ@6A,10V 4.5V@300uA 1PCSNChannel HSOF-8 MOSFETs ROHS |
55V 20A 43W 65mΩ@15A,10V 2V@14uA 2 N-Channel TDSON-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.200 grams / 0.007055 oz |
Package / Case |
HSOF-8 |
TDSON-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
600V |
55V |
Continuous Drain Current (Id) |
19A |
20A |
Power Dissipation (Pd) |
116W |
43W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
145mΩ@6A,10V |
65mΩ@15A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4.5V@300uA |
2V@14uA |
Type |
1PCSNChannel |
2 N-Channel |
Input Capacitance (Ciss@Vds) |
1.199nF@400V |
410pF@25V |
Total Gate Charge (Qg@Vgs) |
28nC@10V |
12nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |