| Model Number |
| IPT60R145CFD7XTMA1 |
SPB20N60C3 |
| Model Name |
| Infineon Technologies IPT60R145CFD7XTMA1 |
Infineon Technologies SPB20N60C3 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 600V 19A 116W 145mΩ@6A,10V 4.5V@300uA 1PCSNChannel HSOF-8 MOSFETs ROHS |
650V 20.7A 208W 190mΩ@10V,13.1A 3.9V@1mA N Channel TO-263-2 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.906 grams / 0.067232 oz |
| Package / Case |
| HSOF-8 |
TO-263-2 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Drain Source Voltage (Vdss) |
| 600V |
650V |
| Continuous Drain Current (Id) |
| 19A |
20.7A |
| Power Dissipation (Pd) |
| 116W |
208W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 145mΩ@6A,10V |
190mΩ@10V,13.1A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4.5V@300uA |
3.9V@1mA |
| Type |
| 1PCSNChannel |
N Channel |
| Input Capacitance (Ciss@Vds) |
| 1.199nF@400V |
N/A |
| Total Gate Charge (Qg@Vgs) |
| 28nC@10V |
N/A |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
