| Model Number |
| IPT60R150G7 |
IPG20N06S4L11ATMA1 |
| Model Name |
| Infineon Technologies IPT60R150G7 |
Infineon Technologies IPG20N06S4L11ATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| HSOF-8 MOSFETs ROHS |
60V 20A 65W 11.2mΩ@17A,10V 2.2V@28uA 2 N-Channel TDSON-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| HSOF-8 |
TDSON-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
60V |
| Continuous Drain Current (Id) |
| - |
20A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
11.2mΩ@17A,10V |
| Power Dissipation (Pd) |
| - |
65W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
2.2V@28uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
2 N-Channel |
| Input Capacitance (Ciss@Vds) |
| - |
4.02nF@25V |
| Total Gate Charge (Qg@Vgs) |
| - |
53nC@10V |
