| Model Number |
| IPT60R150G7 |
SPA20N65C3XKSA1 |
| Model Name |
| Infineon Technologies IPT60R150G7 |
Infineon Technologies SPA20N65C3XKSA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| HSOF-8 MOSFETs ROHS |
650V 20.7A 190mΩ@13.1A,10V 34.5W 3.9V@1mA 1PCSNChannel TO-220-3-31 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| HSOF-8 |
TO-220-3-31 |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| - |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
650V |
| Continuous Drain Current (Id) |
| - |
20.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
190mΩ@13.1A,10V |
| Power Dissipation (Pd) |
| - |
34.5W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
3.9V@1mA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
N/A |
| Type |
| - |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| - |
2.4nF@25V |
| Total Gate Charge (Qg@Vgs) |
| - |
114nC@10V |
