Compare Infineon Technologies – IPU80R2K4P7AKMA1 vs Infineon Technologies – BSZ100N03MSGATMA1 Specifications

IPU80R2K4P7AKMA1 BSZ100N03MSGATMA1
Model Number
IPU80R2K4P7AKMA1 BSZ100N03MSGATMA1
Model Name
Infineon Technologies IPU80R2K4P7AKMA1 Infineon Technologies BSZ100N03MSGATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
800V 2.5A 2.4Ω@800mA,10V 22W 3.5V@40uA 1PCSNChannel TO-251-3 MOSFETs ROHS 30V 9.1mΩ@20A,10V 2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.240 grams / 0.008466 oz
Package / Case
TO-251-3 TSDSON-8
Package / Arrange
Tube-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
800V 30V
Continuous Drain Current (Id)
2.5A 10A;40A
Drain Source On Resistance (RDS(on)@Vgs,Id)
2.4Ω@800mA,10V 9.1mΩ@20A,10V
Power Dissipation (Pd)
22W 2.1W;30W
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@40uA 2V@250uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
150pF@500V 1.7nF@15V
Total Gate Charge (Qg@Vgs)
7.5nC@10V 23nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+150℃@(Tj)

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