Model Number |
IPU80R2K4P7AKMA1 |
IPB120N08S403ATMA1 |
Model Name |
Infineon Technologies IPU80R2K4P7AKMA1 |
Infineon Technologies IPB120N08S403ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
800V 2.5A 2.4Ω@800mA,10V 22W 3.5V@40uA 1PCSNChannel TO-251-3 MOSFETs ROHS |
80V 120A 2.5mΩ@100A,10V 278W 4V@223uA 1PCSNChannel TO-263 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-251-3 |
TO-263 |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
800V |
80V |
Continuous Drain Current (Id) |
2.5A |
120A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
2.4Ω@800mA,10V |
2.5mΩ@100A,10V |
Power Dissipation (Pd) |
22W |
278W |
Gate Threshold Voltage (Vgs(th)@Id) |
3.5V@40uA |
4V@223uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
150pF@500V |
11.55nF@25V |
Total Gate Charge (Qg@Vgs) |
7.5nC@10V |
167nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |