| Model Number |
| IPU80R2K4P7AKMA1 |
IPB80N03S4L03 |
| Model Name |
| Infineon Technologies IPU80R2K4P7AKMA1 |
Infineon Technologies IPB80N03S4L03 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 800V 2.5A 2.4Ω@800mA,10V 22W 3.5V@40uA 1PCSNChannel TO-251-3 MOSFETs ROHS |
30V 80A 94W 3.7mΩ@80A,10V 2.2V@45uA N Channel TO-263-3-2 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-251-3 |
TO-263-3-2 |
| Package / Arrange |
| Tube-packed |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 800V |
30V |
| Continuous Drain Current (Id) |
| 2.5A |
80A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 2.4Ω@800mA,10V |
3.7mΩ@80A,10V |
| Power Dissipation (Pd) |
| 22W |
94W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3.5V@40uA |
2.2V@45uA |
| Type |
| 1PCSNChannel |
N Channel |
| Input Capacitance (Ciss@Vds) |
| 150pF@500V |
5.1nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 7.5nC@10V |
75nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
