| Model Number |
| IR2101PBF |
1EDN6550BXTSA1 |
| Model Name |
| Infineon Technologies IR2101PBF |
Infineon Technologies 1EDN6550BXTSA1 |
| Category |
| Gate Drive ICs |
Gate Drive ICs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| Half Bridge 2 210mA 100ns 50ns 10V~20V 360mA PDIP-8 Gate Drive ICs ROHS |
2 MOSFET 5.2A 1ns 1ns 4.5V~20V 9.4A SOT-23-6 Gate Drive ICs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.200 grams / 0.042329 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| PDIP-8 |
SOT-23-6 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Driven Configuration |
| Half Bridge |
High Side;Low Side |
| Operating Temperature |
| -40℃~+150℃@(Tj) |
-40℃~+150℃@(Tj) |
| Number of Drivers |
| 2 |
2 |
| Load Type |
| IGBT;MOSFET |
MOSFET |
| Peak Output Current(source) |
| 210mA |
5.2A |
| Rise Time |
| 100ns |
1ns |
| Fall Time |
| 50ns |
1ns |
| Supply Voltage |
| 10V~20V |
4.5V~20V |
| Peak Output Current(sink) |
| 360mA |
9.4A |
