| Model Number |
| IR2108STRPBF |
2EDN8523G |
| Model Name |
| Infineon Technologies IR2108STRPBF |
Infineon Technologies 2EDN8523G |
| Category |
| Gate Drive ICs |
Gate Drive ICs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| Half Bridge 2 200mA 150ns 50ns 10V~20V 350mA SOIC-8 Gate Drive ICs ROHS |
WSON-8-EP(3x3) Gate Drive ICs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.219 grams / 0.007725 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOIC-8 |
WSON-8-EP(3x3) |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Driven Configuration |
| Half Bridge |
N/A |
| Operating Temperature |
| -40℃~+150℃@(Tj) |
N/A |
| Number of Drivers |
| 2 |
N/A |
| Load Type |
| IGBT;MOSFET |
N/A |
| Peak Output Current(source) |
| 200mA |
N/A |
| Rise Time |
| 150ns |
N/A |
| Fall Time |
| 50ns |
N/A |
| Supply Voltage |
| 10V~20V |
N/A |
| Peak Output Current(sink) |
| 350mA |
N/A |
