Compare Infineon Technologies – IR2108STRPBF vs Infineon Technologies – IR21363STRPBF Specifications

IR2108STRPBF IR21363STRPBF
Model Number
IR2108STRPBF IR21363STRPBF
Model Name
Infineon Technologies IR2108STRPBF Infineon Technologies IR21363STRPBF
Category
Gate Drive ICs Gate Drive ICs
Brand
Infineon Technologies Infineon Technologies
Description
Half Bridge 2 200mA 150ns 50ns 10V~20V 350mA SOIC-8 Gate Drive ICs ROHS Half Bridge 6 200mA 125ns 50ns 12V~20V 350mA SOIC-28-300mil Gate Drive ICs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.219 grams / 0.007725 oz 1.000 grams / 0.035274 oz
Package / Case
SOIC-8 SOIC-28-300mil
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Driven Configuration
Half Bridge Half Bridge
Operating Temperature
-40℃~+150℃@(Tj) -40℃~+150℃@(Tj)
Number of Drivers
2 6
Load Type
IGBT;MOSFET IGBT;MOSFET
Peak Output Current(source)
200mA 200mA
Rise Time
150ns 125ns
Fall Time
50ns 50ns
Supply Voltage
10V~20V 12V~20V
Peak Output Current(sink)
350mA 350mA

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