| Model Number |
| IR2111SPBF |
2ED2410EMXUMA1 |
| Model Name |
| Infineon Technologies IR2111SPBF |
Infineon Technologies 2ED2410EMXUMA1 |
| Category |
| Gate Drive ICs |
Gate Drive ICs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| Half Bridge 2 250mA 80ns 40ns 10V~20V 500mA SOIC-8 Gate Drive ICs ROHS |
High Side 2 MOSFET 175mA 7us 2us 3V~58V 1.4A TSDSO-24 Gate Drive ICs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.286 grams / 0.010088 oz |
0.160 grams / 0.005644 oz |
| Package / Case |
| SOIC-8 |
TSDSO-24 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Driven Configuration |
| Half Bridge |
High Side |
| Operating Temperature |
| -40℃~+150℃@(Tj) |
-40℃~+150℃@(Tj) |
| Number of Drivers |
| 2 |
2 |
| Load Type |
| IGBT;MOSFET |
MOSFET |
| Peak Output Current(source) |
| 250mA |
175mA |
| Rise Time |
| 80ns |
7us |
| Fall Time |
| 40ns |
2us |
| Supply Voltage |
| 10V~20V |
3V~58V |
| Peak Output Current(sink) |
| 500mA |
1.4A |
