Compare Infineon Technologies – IR2111SPBF vs Infineon Technologies – 2EDL8113G Specifications

IR2111SPBF 2EDL8113G
Model Number
IR2111SPBF 2EDL8113G
Model Name
Infineon Technologies IR2111SPBF Infineon Technologies 2EDL8113G
Category
Gate Drive ICs Gate Drive ICs
Brand
Infineon Technologies Infineon Technologies
Description
Half Bridge 2 250mA 80ns 40ns 10V~20V 500mA SOIC-8 Gate Drive ICs ROHS VSON-8-EP(4x4) Gate Drive ICs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.286 grams / 0.010088 oz 1.000 grams / 0.035274 oz
Package / Case
SOIC-8 VSON-8-EP(4x4)
Package / Arrange
Tube-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 -
Driven Configuration
Half Bridge N/A
Operating Temperature
-40℃~+150℃@(Tj) N/A
Number of Drivers
2 N/A
Load Type
IGBT;MOSFET N/A
Peak Output Current(source)
250mA N/A
Rise Time
80ns N/A
Fall Time
40ns N/A
Supply Voltage
10V~20V N/A
Peak Output Current(sink)
500mA N/A

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