| Model Number |
| IR2113PBF |
2EDL8124G3CXTMA1 |
| Model Name |
| Infineon Technologies IR2113PBF |
Infineon Technologies 2EDL8124G3CXTMA1 |
| Category |
| Gate Drive ICs |
Gate Drive ICs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| Half Bridge 2 2A 25ns 17ns 3.3V~20V 2A DIP-14 Gate Drive ICs ROHS |
Half Bridge 2 MOSFET 4A 45ns 45ns 8V~17V 5A VDSON-8 Gate Drive ICs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.930 grams / 0.068079 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| DIP-14 |
VDSON-8 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Driven Configuration |
| Half Bridge |
Half Bridge |
| Operating Temperature |
| -40℃~+150℃@(Tj) |
-40℃~+125℃@(Tj) |
| Number of Drivers |
| 2 |
2 |
| Load Type |
| IGBT;MOSFET |
MOSFET |
| Peak Output Current(source) |
| 2A |
4A |
| Rise Time |
| 25ns |
45ns |
| Fall Time |
| 17ns |
45ns |
| Supply Voltage |
| 3.3V~20V |
8V~17V |
| Peak Output Current(sink) |
| 2A |
5A |
