Compare Infineon Technologies – IR2113PBF vs Infineon Technologies – IR1169STRPBF Specifications

IR2113PBF IR1169STRPBF
Model Number
IR2113PBF IR1169STRPBF
Model Name
Infineon Technologies IR2113PBF Infineon Technologies IR1169STRPBF
Category
Gate Drive ICs Gate Drive ICs
Brand
Infineon Technologies Infineon Technologies
Description
Half Bridge 2 2A 25ns 17ns 3.3V~20V 2A DIP-14 Gate Drive ICs ROHS Low Side 1 MOSFET 1A 20ns 10ns 11V~19V 4A SOIC-8 Gate Drive ICs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.930 grams / 0.068079 oz 1.000 grams / 0.035274 oz
Package / Case
DIP-14 SOIC-8
Package / Arrange
Tube-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Driven Configuration
Half Bridge Low Side
Operating Temperature
-40℃~+150℃@(Tj) -25℃~+125℃@(Tj)
Number of Drivers
2 1
Load Type
IGBT;MOSFET MOSFET
Peak Output Current(source)
2A 1A
Rise Time
25ns 20ns
Fall Time
17ns 10ns
Supply Voltage
3.3V~20V 11V~19V
Peak Output Current(sink)
2A 4A

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