Compare Infineon Technologies – IRF1310NSPBF-INF vs Infineon Technologies – BSC019N04NS G Specifications

IRF1310NSPBF-INF BSC019N04NS G
Model Number
IRF1310NSPBF-INF BSC019N04NS G
Model Name
Infineon Technologies IRF1310NSPBF-INF Infineon Technologies BSC019N04NS G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
100V 42A 36mΩ@22A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS 40V 100A 1.9mΩ@10V,50A 125W 4V@85uA 1PCSNChannel TDSON-8-EP(5x6) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.110 grams / 0.00388 oz
Package / Case
D2PAK TDSON-8-EP(5x6)
Package / Arrange
Bag-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
100V 40V
Continuous Drain Current (Id)
42A 100A
Drain Source On Resistance (RDS(on)@Vgs,Id)
36mΩ@22A,10V 1.9mΩ@10V,50A
Power Dissipation (Pd)
3.8W;160W 125W
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA 4V@85uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
1.9nF@25V N/A
Total Gate Charge (Qg@Vgs)
110nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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