| Model Number |
| IRF1310NSPBF-INF |
IPD082N10N3G |
| Model Name |
| Infineon Technologies IRF1310NSPBF-INF |
Infineon Technologies IPD082N10N3G |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 100V 42A 36mΩ@22A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
100V 80A 8.2mΩ@10V,73A 125W 3.5V@75uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.481 grams / 0.016967 oz |
| Package / Case |
| D2PAK |
TO-252-3 |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 100V |
100V |
| Continuous Drain Current (Id) |
| 42A |
80A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 36mΩ@22A,10V |
8.2mΩ@10V,73A |
| Power Dissipation (Pd) |
| 3.8W;160W |
125W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
3.5V@75uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 1.9nF@25V |
- |
| Total Gate Charge (Qg@Vgs) |
| 110nC@10V |
- |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
- |
