Compare Infineon Technologies – IRF1310NSPBF-INF vs Infineon Technologies – IPD26N06S2L35ATMA2 Specifications

IRF1310NSPBF-INF IPD26N06S2L35ATMA2
Model Number
IRF1310NSPBF-INF IPD26N06S2L35ATMA2
Model Name
Infineon Technologies IRF1310NSPBF-INF Infineon Technologies IPD26N06S2L35ATMA2
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
100V 42A 36mΩ@22A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS 55V 30A 68W 35mΩ@13A,10V 2V@26uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.800 grams / 0.028219 oz
Package / Case
D2PAK TO-252
Package / Arrange
Bag-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
100V 55V
Continuous Drain Current (Id)
42A 30A
Drain Source On Resistance (RDS(on)@Vgs,Id)
36mΩ@22A,10V 35mΩ@13A,10V
Power Dissipation (Pd)
3.8W;160W 68W
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA 2V@26uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
1.9nF@25V 621pF@25V
Total Gate Charge (Qg@Vgs)
110nC@10V 24nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

Compare Infineon Technologies - IRF1310NSPBF-INF With Other 200 Models

Scroll to Top