Model Number |
IRF1310NSPBF-INF |
IPD80R1K2P7ATMA1 |
Model Name |
Infineon Technologies IRF1310NSPBF-INF |
Infineon Technologies IPD80R1K2P7ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 42A 36mΩ@22A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
800V 4.5A 37W 1.2Ω@1.7A,10V 3.5V@80uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.483 grams / 0.017037 oz |
Package / Case |
D2PAK |
TO-252-3 |
Package / Arrange |
Bag-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
800V |
Continuous Drain Current (Id) |
42A |
4.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
36mΩ@22A,10V |
1.2Ω@1.7A,10V |
Power Dissipation (Pd) |
3.8W;160W |
37W |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
3.5V@80uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.9nF@25V |
300pF@500V |
Total Gate Charge (Qg@Vgs) |
110nC@10V |
11nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |