Compare Infineon Technologies – IRF1310NSPBF-INF vs Infineon Technologies – IPD80R1K2P7ATMA1 Specifications

IRF1310NSPBF-INF IPD80R1K2P7ATMA1
Model Number
IRF1310NSPBF-INF IPD80R1K2P7ATMA1
Model Name
Infineon Technologies IRF1310NSPBF-INF Infineon Technologies IPD80R1K2P7ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
100V 42A 36mΩ@22A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS 800V 4.5A 37W 1.2Ω@1.7A,10V 3.5V@80uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.483 grams / 0.017037 oz
Package / Case
D2PAK TO-252-3
Package / Arrange
Bag-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
100V 800V
Continuous Drain Current (Id)
42A 4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)
36mΩ@22A,10V 1.2Ω@1.7A,10V
Power Dissipation (Pd)
3.8W;160W 37W
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA 3.5V@80uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
1.9nF@25V 300pF@500V
Total Gate Charge (Qg@Vgs)
110nC@10V 11nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+150℃@(Tj)

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