| Model Number |
| IRF1310NSPBF-INF |
IPS65R1K4C6AKMA1 |
| Model Name |
| Infineon Technologies IRF1310NSPBF-INF |
Infineon Technologies IPS65R1K4C6AKMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 100V 42A 36mΩ@22A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
650V 3.2A 28W 1.4Ω@1A,10V 3.5V@100uA 1PCSNChannel TO-251-3-11 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| D2PAK |
TO-251-3-11 |
| Package / Arrange |
| Bag-packed |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 100V |
650V |
| Continuous Drain Current (Id) |
| 42A |
3.2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 36mΩ@22A,10V |
1.4Ω@1A,10V |
| Power Dissipation (Pd) |
| 3.8W;160W |
28W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
3.5V@100uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 1.9nF@25V |
225pF@100V |
| Total Gate Charge (Qg@Vgs) |
| 110nC@10V |
10.5nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |
