| Model Number |
| IRF1405PBF |
IPB200N15N3GATMA1 |
| Model Name |
| Infineon Technologies IRF1405PBF |
Infineon Technologies IPB200N15N3GATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 55V 169A 330W 5.3mΩ@10V,101A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS |
150V 50A 150W 20mΩ@50A,10V 4V@90uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 2.750 grams / 0.097003 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-220AB |
TO-263-3 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 55V |
150V |
| Continuous Drain Current (Id) |
| 169A |
50A |
| Power Dissipation (Pd) |
| 330W |
150W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 5.3mΩ@10V,101A |
20mΩ@50A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
4V@90uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 5.48nF@25V |
1.82nF@75V |
| Total Gate Charge (Qg@Vgs) |
| 260nC@10V |
31nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |
