| Model Number |
| IRF1405PBF |
IPG20N06S2L35ATMA1 |
| Model Name |
| Infineon Technologies IRF1405PBF |
Infineon Technologies IPG20N06S2L35ATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 55V 169A 330W 5.3mΩ@10V,101A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS |
55V 20A 65W 35mΩ@15A,10V 2V@27uA 2 N-Channel TDSON-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 2.750 grams / 0.097003 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-220AB |
TDSON-8 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 55V |
55V |
| Continuous Drain Current (Id) |
| 169A |
20A |
| Power Dissipation (Pd) |
| 330W |
65W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 5.3mΩ@10V,101A |
35mΩ@15A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
2V@27uA |
| Type |
| 1PCSNChannel |
2 N-Channel |
| Input Capacitance (Ciss@Vds) |
| 5.48nF@25V |
790pF@25V |
| Total Gate Charge (Qg@Vgs) |
| 260nC@10V |
23nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |
