Model Number |
IRF630NPBF |
BSB044N08NN3GXUMA1 |
Model Name |
Infineon Technologies IRF630NPBF |
Infineon Technologies BSB044N08NN3GXUMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
200V 9.3A 82W 300mΩ@10V,5.4A 4V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS |
80V 4.4mΩ@30A,10V 3.5V@97uA 1PCSNChannel WDSON-2-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
2.750 grams / 0.097003 oz |
0.120 grams / 0.004233 oz |
Package / Case |
TO-220AB |
WDSON-2-3 |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
200V |
80V |
Continuous Drain Current (Id) |
9.3A |
18A;90A |
Power Dissipation (Pd) |
82W |
2.2W;78W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
300mΩ@10V,5.4A |
4.4mΩ@30A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
3.5V@97uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
575pF@25V |
5.7nF@40V |
Total Gate Charge (Qg@Vgs) |
35nC@10V |
73nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-40℃~+150℃@(Tj) |