| Model Number |
| IRF7473TRPBF |
BSD214SN H6327 |
| Model Name |
| Infineon Technologies IRF7473TRPBF |
Infineon Technologies BSD214SN H6327 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 100V 6.9A 2.5W 26mΩ@4.1A,10V 5.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS |
20V 1.5A 500mW 140mΩ@4.5V,1.5A [email protected] 1PCSNChannel SOT-363-6 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.110 grams / 0.00388 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SO-8 |
SOT-363-6 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 100V |
20V |
| Continuous Drain Current (Id) |
| 6.9A |
1.5A |
| Power Dissipation (Pd) |
| 2.5W |
500mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 26mΩ@4.1A,10V |
140mΩ@4.5V,1.5A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 5.5V@250uA |
[email protected] |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 3.18nF@25V |
143pF@10V |
| Total Gate Charge (Qg@Vgs) |
| 61nC@10V |
800pC@5V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
