Model Number |
IRF7473TRPBF |
IPB029N06N3 G |
Model Name |
Infineon Technologies IRF7473TRPBF |
Infineon Technologies IPB029N06N3 G |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 6.9A 2.5W 26mΩ@4.1A,10V 5.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS |
60V 120A 2.6mΩ@10V,100A 188W 3V@118uA N Channel TO-263-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.110 grams / 0.00388 oz |
1.000 grams / 0.035274 oz |
Package / Case |
SO-8 |
TO-263-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
100V |
60V |
Continuous Drain Current (Id) |
6.9A |
120A |
Power Dissipation (Pd) |
2.5W |
188W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
26mΩ@4.1A,10V |
2.6mΩ@10V,100A |
Gate Threshold Voltage (Vgs(th)@Id) |
5.5V@250uA |
3V@118uA |
Type |
1PCSNChannel |
N Channel |
Input Capacitance (Ciss@Vds) |
3.18nF@25V |
10nF@30V |
Total Gate Charge (Qg@Vgs) |
61nC@10V |
124nC@0~10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |