Model Number |
IRF7473TRPBF |
IPD50N04S408ATMA1 |
Model Name |
Infineon Technologies IRF7473TRPBF |
Infineon Technologies IPD50N04S408ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 6.9A 2.5W 26mΩ@4.1A,10V 5.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS |
40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.110 grams / 0.00388 oz |
0.600 grams / 0.021164 oz |
Package / Case |
SO-8 |
TO-252-3-313 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
40V |
Continuous Drain Current (Id) |
6.9A |
50A |
Power Dissipation (Pd) |
2.5W |
46W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
26mΩ@4.1A,10V |
7.9mΩ@50A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
5.5V@250uA |
4V@17uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
3.18nF@25V |
1.78nF@6V |
Total Gate Charge (Qg@Vgs) |
61nC@10V |
22.4nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |