| Model Number |
| IRLU120NPBF |
IPG20N10S4L35ATMA1 |
| Model Name |
| Infineon Technologies IRLU120NPBF |
Infineon Technologies IPG20N10S4L35ATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 100V 10A 185mΩ@10V,6A 48W 2V@250uA 1PCSNChannel TO-251(IPAK) MOSFETs ROHS |
100V 20A 35mΩ@17A,10V 43W 2.1V@16uA 2 N-Channel TDSON-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.057 grams / 0.037285 oz |
0.127 grams / 0.00448 oz |
| Package / Case |
| TO-251(IPAK) |
TDSON-8 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 100V |
100V |
| Continuous Drain Current (Id) |
| 10A |
20A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 185mΩ@10V,6A |
35mΩ@17A,10V |
| Power Dissipation (Pd) |
| 48W |
43W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2V@250uA |
2.1V@16uA |
| Type |
| 1PCSNChannel |
2 N-Channel |
| Input Capacitance (Ciss@Vds) |
| 440pF@25V |
1.105nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 20nC@5V |
17.4nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |
