| Model Number |
| ISZ0804NLSATMA1 |
IPT026N10N5 |
| Model Name |
| Infineon Technologies ISZ0804NLSATMA1 |
Infineon Technologies IPT026N10N5 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 100V 11.5mΩ@20A,10V 2.3V@28uA 1PCSNChannel TSDSON-8 MOSFETs ROHS |
HSOF-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.180 grams / 0.006349 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TSDSON-8 |
HSOF-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Drain Source Voltage (Vdss) |
| 100V |
- |
| Continuous Drain Current (Id) |
| 11A;58A |
- |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 11.5mΩ@20A,10V |
- |
| Power Dissipation (Pd) |
| 2.1W;60W |
- |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.3V@28uA |
- |
| Type |
| 1PCSNChannel |
- |
| Input Capacitance (Ciss@Vds) |
| 1.6nF@50V |
- |
| Total Gate Charge (Qg@Vgs) |
| 24nC@10V |
- |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
