Model Number |
ISZ0804NLSATMA1 |
IPT60R125G7 |
Model Name |
Infineon Technologies ISZ0804NLSATMA1 |
Infineon Technologies IPT60R125G7 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
100V 11.5mΩ@20A,10V 2.3V@28uA 1PCSNChannel TSDSON-8 MOSFETs ROHS |
HSOF-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.180 grams / 0.006349 oz |
0.860 grams / 0.030336 oz |
Package / Case |
TSDSON-8 |
HSOF-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
- |
Continuous Drain Current (Id) |
11A;58A |
- |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
11.5mΩ@20A,10V |
- |
Power Dissipation (Pd) |
2.1W;60W |
- |
Gate Threshold Voltage (Vgs(th)@Id) |
2.3V@28uA |
- |
Type |
1PCSNChannel |
- |
Input Capacitance (Ciss@Vds) |
1.6nF@50V |
- |
Total Gate Charge (Qg@Vgs) |
24nC@10V |
- |
Operating Temperature |
-55℃~+150℃@(Tj) |
N/A |