| Model Number |
| SPP02N60C3 |
BSC0904NSIATMA1 |
| Model Name |
| Infineon Technologies SPP02N60C3 |
Infineon Technologies BSC0904NSIATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 600V 1.8A 3Ω@1.1A,10V 25W 3.9V@80uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
30V 3.7mΩ@30A,10V 2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.400 grams / 0.01411 oz |
| Package / Case |
| TO-220-3 |
TDSON-8 |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 600V |
30V |
| Continuous Drain Current (Id) |
| 1.8A |
20A;78A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 3Ω@1.1A,10V |
3.7mΩ@30A,10V |
| Power Dissipation (Pd) |
| 25W |
2.5W;37W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3.9V@80uA |
2V@250uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 200pF@25V |
1.1nF@15V |
| Total Gate Charge (Qg@Vgs) |
| 12.5nC@10V |
17nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
