Model Number |
SPP80N06S209 |
IRF5801TRPBF |
Model Name |
Infineon Technologies SPP80N06S209 |
Infineon Technologies IRF5801TRPBF |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
55V 80A 9.1mΩ@50A,10V 190W 4V@125uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
200V 600mA 2W 2.2Ω@10V,360mA 5.5V@250uA 1PCSNChannel TSOP-6 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.041 grams / 0.001446 oz |
Package / Case |
TO-220-3 |
TSOP-6 |
Package / Arrange |
Bag-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
55V |
200V |
Continuous Drain Current (Id) |
80A |
600mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
9.1mΩ@50A,10V |
2.2Ω@10V,360mA |
Power Dissipation (Pd) |
190W |
2W |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@125uA |
5.5V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
3.14nF@25V |
88pF@25V |
Total Gate Charge (Qg@Vgs) |
80nC@10V |
3.9nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |