| Model Number |
| SPP80N06S209 |
IRF8313PBF |
| Model Name |
| Infineon Technologies SPP80N06S209 |
Infineon Technologies IRF8313PBF |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 55V 80A 9.1mΩ@50A,10V 190W 4V@125uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
30V 9.7A 15.5mΩ@10V,9.7A 2W 2.35V@25uA 2 N-Channel SOIC-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.286 grams / 0.010088 oz |
| Package / Case |
| TO-220-3 |
SOIC-8 |
| Package / Arrange |
| Bag-packed |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 55V |
30V |
| Continuous Drain Current (Id) |
| 80A |
9.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 9.1mΩ@50A,10V |
15.5mΩ@10V,9.7A |
| Power Dissipation (Pd) |
| 190W |
2W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@125uA |
2.35V@25uA |
| Type |
| 1PCSNChannel |
2 N-Channel |
| Input Capacitance (Ciss@Vds) |
| 3.14nF@25V |
N/A |
| Total Gate Charge (Qg@Vgs) |
| 80nC@10V |
N/A |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
N/A |
