Compare Infineon Technologies – SPPO4N80C3 vs Infineon Technologies – IPD30N06S2L23ATMA3 Specifications

SPPO4N80C3 IPD30N06S2L23ATMA3
Model Number
SPPO4N80C3 IPD30N06S2L23ATMA3
Model Name
Infineon Technologies SPPO4N80C3 Infineon Technologies IPD30N06S2L23ATMA3
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
800V 4A 63W 1.3Ω@2.5A,10V 3.9V@240uA 1PCSNChannel TO-220-3 MOSFETs ROHS 55V 30A 100W 23mΩ@10V,22A 2V@50uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.481 grams / 0.016967 oz
Package / Case
TO-220-3 TO-252(DPAK)
Package / Arrange
Bag-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
800V 55V
Continuous Drain Current (Id)
4A 30A
Power Dissipation (Pd)
63W 100W
Drain Source On Resistance (RDS(on)@Vgs,Id)
1.3Ω@2.5A,10V 23mΩ@10V,22A
Gate Threshold Voltage (Vgs(th)@Id)
3.9V@240uA 2V@50uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
570pF@100V 1.091nF@25V
Total Gate Charge (Qg@Vgs)
31nC@10V 42nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+175℃@(Tj)

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