| Model Number |
| SPPO4N80C3 |
IPD60R180P7ATMA1 |
| Model Name |
| Infineon Technologies SPPO4N80C3 |
Infineon Technologies IPD60R180P7ATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 800V 4A 63W 1.3Ω@2.5A,10V 3.9V@240uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
650V 18A 72W 180mΩ@5.6A,10V 4V@280uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.650 grams / 0.022928 oz |
| Package / Case |
| TO-220-3 |
TO-252-3 |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 800V |
650V |
| Continuous Drain Current (Id) |
| 4A |
18A |
| Power Dissipation (Pd) |
| 63W |
72W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 1.3Ω@2.5A,10V |
180mΩ@5.6A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3.9V@240uA |
4V@280uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 570pF@100V |
1.081nF@400V |
| Total Gate Charge (Qg@Vgs) |
| 31nC@10V |
25nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
