Model Number |
SPPO4N80C3 |
IPD65R660CFD |
Model Name |
Infineon Technologies SPPO4N80C3 |
Infineon Technologies IPD65R660CFD |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
800V 4A 63W 1.3Ω@2.5A,10V 3.9V@240uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
650V 6A 594mΩ@10V,2.1A 62.5W 4.5V@200uA 1PCSNChannel TO-252 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-220-3 |
TO-252 |
Package / Arrange |
Bag-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
800V |
650V |
Continuous Drain Current (Id) |
4A |
6A |
Power Dissipation (Pd) |
63W |
62.5W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
1.3Ω@2.5A,10V |
594mΩ@10V,2.1A |
Gate Threshold Voltage (Vgs(th)@Id) |
3.9V@240uA |
4.5V@200uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
570pF@100V |
615pF@100v |
Total Gate Charge (Qg@Vgs) |
31nC@10V |
22nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |