| Model Number |
| FDB8160-F085 |
FDD86540 |
| Model Name |
| onsemi FDB8160-F085 |
onsemi FDD86540 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 80A 254W 1.8mΩ@80A,10V 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS |
60V 4.1mΩ@21.5A,10V 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.484 grams / 0.017073 oz |
| Package / Case |
| TO-263AB |
TO-252 |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
60V |
| Continuous Drain Current (Id) |
| 80A |
21.5A;50A |
| Power Dissipation (Pd) |
| 254W |
3.1W;127W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 1.8mΩ@80A,10V |
4.1mΩ@21.5A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
4V@250uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 11.825nF@15V |
6.34nF@30V |
| Total Gate Charge (Qg@Vgs) |
| 243nC@10V |
90nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |
