Model Number |
FDB8160-F085 |
FQB70N08TM |
Model Name |
onsemi FDB8160-F085 |
onsemi FQB70N08TM |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
30V 80A 254W 1.8mΩ@80A,10V 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS |
80V 70A 17mΩ@35A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263AB |
D2PAK(TO-263) |
Package / Arrange |
Bag-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
80V |
Continuous Drain Current (Id) |
80A |
70A |
Power Dissipation (Pd) |
254W |
3.75W;155W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
1.8mΩ@80A,10V |
17mΩ@35A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
4V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
11.825nF@15V |
2.7nF@25V |
Total Gate Charge (Qg@Vgs) |
243nC@10V |
98nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |