Model Number |
FDB8160-F085 |
NTD4979N-35G |
Model Name |
onsemi FDB8160-F085 |
onsemi NTD4979N-35G |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
30V 80A 254W 1.8mΩ@80A,10V 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS |
30V 41A 6.9mΩ@10V,30A 26.3W 1.8V@250uA 1PCSNChannel IPAK MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.085 grams / 0.002998 oz |
Package / Case |
TO-263AB |
IPAK |
Package / Arrange |
Bag-packed |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
30V |
30V |
Continuous Drain Current (Id) |
80A |
41A |
Power Dissipation (Pd) |
254W |
26.3W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
1.8mΩ@80A,10V |
6.9mΩ@10V,30A |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
1.8V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
11.825nF@15V |
837pF@15V |
Total Gate Charge (Qg@Vgs) |
243nC@10V |
[email protected] |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |