Model Number |
FDD3860 |
FDB86135 |
Model Name |
onsemi FDD3860 |
onsemi FDB86135 |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
100V 6.2A 36mΩ@5.9A,10V 4.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
100V 75A 3mΩ@10V,75A 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.085 grams / 0.002998 oz |
2.700 grams / 0.09524 oz |
Package / Case |
TO-252 |
D2PAK |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
100V |
Continuous Drain Current (Id) |
6.2A |
75A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
36mΩ@5.9A,10V |
3mΩ@10V,75A |
Power Dissipation (Pd) |
3.1W;69W |
2.4W;227W |
Gate Threshold Voltage (Vgs(th)@Id) |
4.5V@250uA |
4V@250uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
210pF@25V |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.74nF@50V |
5.485nF@25V |
Total Gate Charge (Qg@Vgs) |
31nC@10V |
89nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |