Model Number |
FDD3860 |
FDMB3900AN |
Model Name |
onsemi FDD3860 |
onsemi FDMB3900AN |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
100V 6.2A 36mΩ@5.9A,10V 4.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
25V 7A 800mW 23mΩ@7A,10V 3V@250uA MicroFET-8(3x1.9) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.085 grams / 0.002998 oz |
0.045 grams / 0.001587 oz |
Package / Case |
TO-252 |
MicroFET-8(3x1.9) |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
25V |
Continuous Drain Current (Id) |
6.2A |
7A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
36mΩ@5.9A,10V |
23mΩ@7A,10V |
Power Dissipation (Pd) |
3.1W;69W |
800mW |
Gate Threshold Voltage (Vgs(th)@Id) |
4.5V@250uA |
3V@250uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
1PCSNChannel |
N/A |
Input Capacitance (Ciss@Vds) |
1.74nF@50V |
890pF@13V |
Total Gate Charge (Qg@Vgs) |
31nC@10V |
17nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |