Model Number |
FDD3860 |
FDS8880 |
Model Name |
onsemi FDD3860 |
onsemi FDS8880 |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
100V 6.2A 36mΩ@5.9A,10V 4.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
30V 11.6A 10mΩ@10V,11.6A 2.5W 2.5V@250uA 1PCSNChannel SOIC-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.085 grams / 0.002998 oz |
0.120 grams / 0.004233 oz |
Package / Case |
TO-252 |
SOIC-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
30V |
Continuous Drain Current (Id) |
6.2A |
11.6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
36mΩ@5.9A,10V |
10mΩ@10V,11.6A |
Power Dissipation (Pd) |
3.1W;69W |
2.5W |
Gate Threshold Voltage (Vgs(th)@Id) |
4.5V@250uA |
2.5V@250uA |
Reverse Transfer Capacitance (Crss@Vds) |
- |
N/A |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.74nF@50V |
1.235nF@15V |
Total Gate Charge (Qg@Vgs) |
31nC@10V |
30nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |